IRF640NL【PDF 1/12 页】MOSFET N-CH 200V 18A TO-262

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录443

[1页]2页 3页 4页 5页

PD - 94006A

IRF640N

IRF640NS

Advanced Process Technology

Dynamic dv/dt Rating

IRF640NL

HEXFET ? Power MOSFET

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

V DSS = 200V

R DS(on) = 0.15 ?

Description

Fifth Generation HEXFET ? Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D 2 Pak is a surface mount power package capable of

I D = 18A

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

TO-220AB

IRF640N

D 2 Pak

IRF640NS

TO-262

IRF640NL

D 2 Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF640NL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

I D @ T C = 100°C

I DM

P D @T C = 25°C

V GS

E AS

I AR

E AR

dv/dt

Continuous Drain Current, V GS @ 10V

Pulsed Drain Current ?

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ?

Avalanche Current ?

Repetitive Avalanche Energy ?

Peak Diode Recovery dv/dt ?

150

1.0

± 20

247

8.1

W/°C

V/ns

T J

T STG

Operating Junction and

Storage Temperature Range

-55 to +175

°C

www.irf.com

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew ?

300 (1.6mm from case )

10 lbf?in (1.1N?m)

10/08/04

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式